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  document number: 93691 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 19-jun-08 1 surface mountable phase control scr, 10 a 10tts08s high voltage series vishay high power products description/features the 10tts08s high voltage seri es of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. typical applications are in input rectification (soft start) and these products are designed to be used with vishay hpp input diodes, switches and ou tput rectifiers which are available in identical package outlines. this product has been designed and qualified for industrial level. note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 product summary v t at 6.5 a < 1.15 v i tsm 140 a v rrm 800 v (g) 3 2 (a) 1 (k) d 2 pak output current in typical applications applications single-phase bridge three-phase bridge units nema fr-4 or g-10 gl ass fabric-based epoxy with 4 oz. (140 m) copper 2.5 3.5 a aluminum ims, r thca = 15 c/w 6.3 9.5 aluminum ims with heatsink, r thca = 5 c/w 14.0 18.5 major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 6.5 a i rms 10 v rrm /v drm 800 v i tsm 140 a v t 6.5 a, t j = 25 c 1.15 v dv/dt 150 v/s di/dt 100 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma 10tts08s 800 800 1.0
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93691 2 revision: 19-jun-08 10tts08s high voltage series vishay high power products surface mountable phase control scr, 10 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 112 c, 180 conduction half sine wave 6.5 a maximum rms on-state current i t(rms) 10 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied, t j = 125 c 120 10 ms sine pulse, no voltage reapplied, t j = 125 c 140 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied, t j = 125 c 72 a 2 s 10 ms sine pulse, no voltage reapplied, t j = 125 c 100 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied, t j = 125 c 1000 a 2 s maximum on-state voltage drop v tm 6.5 a, t j = 25 c 1.15 v on-state slope resistance r t t j = 125 c 17.3 m threshold voltage v t(to) 0.85 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.05 ma t j = 125 c 1.0 typical holding current i h anode supply = 6 v, resistive load, initial i t = 1 a 30 maximum latching current i l anode supply = 6 v, resistive load 50 maximum rate of rise of off-state voltage dv/dt t j = 25 c 150 v/s maximum rate of rise of turned-on current di/dt 100 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current +i gm 1.5 a maximum peak negative gate voltage -v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 65 c 20 ma anode supply = 6 v, resistive load, t j = 25 c 15 anode supply = 6 v, resistive load, t j = 125 c 10 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 65 c 1.2 v anode supply = 6 v, resistive load, t j = 25 c 1 anode supply = 6 v, resistive load, t j = 125 c 0.7 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.2 maximum dc gate current not to trigger i gd 0.1 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.8 s typical reverse recovery time t rr t j = 125 c 3 typical turn-off time t q 100
document number: 93691 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 19-jun-08 3 10tts08s high voltage series surface mountable phase contro l scr, 10 a vishay high power products note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w for recommended footprint and soldering te chniques refer to application note #an-994 thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c soldering temperature t s for 10 s (1.6 mm from case) 240 maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w typical thermal resistance, junction to ambient (pcb mount) r thja (1) 40 approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 10tts08s
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93691 4 revision: 19-jun-08 10tts08s high voltage series vishay high power products surface mountable phase control scr, 10 a fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 105 110 115 120 125 01234567 30 60 90 120 180 maximum allowable case temperature (c) cond uct ion angle average on-state current (a) 10tts08 r (dc) = 1.5 k/w thjc 105 110 115 120 125 024681012 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 10tts08 r (dc) = 1.5 k/w thjc 0 1 2 3 4 5 6 7 8 01234567 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 10tts08 t = 125c j 0 2 4 6 8 10 12 024681012 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) averag e on -state current (a) 10tts08 t = 125c j 60 70 80 90 100 110 120 130 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. rrm peak half sine wave on-state current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 10tts08 50 60 70 80 90 100 110 120 130 140 150 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of con duction may not be maintained. initial t = 125 c no voltage reapplied rated v reapplied rrm j 10tts08
document number: 93691 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 19-jun-08 5 10tts08s high voltage series surface mountable phase contro l scr, 10 a vishay high power products fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 10tts08 0.01 0.1 1 10 0.0001 0.001 0. 01 0.1 1 square wave pulse duration (s) steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 thjc transient thermal impedance z (c/w) 10tts08
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93691 6 revision: 19-jun-08 10tts08s high voltage series vishay high power products surface mountable phase control scr, 10 a ordering information table 1 - current rating, rms value 2 - circuit configuration: t = single thyristor t = to-220ac s = converter grade 3 - package: 4 - type of silicon: 5 - voltage code x 100 = v rrm 6 - s = to-220 d 2 pak (smd-220) version 7 - tape and reel option: 8 - none = standard production trl = left reel trr = right orientation reel pbf = lead (pb)-free device code 5 13 24 678 10 t t s 08 s trl - links to related documents dimensions http://www.vishay.com/doc?95046 part marking information http://www.vishay.com/doc?95054 packaging information http://www.vishay.com/doc?95032
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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